Microsemi offer Radiation Hardened Power MOSFETs to 300K RADS
The Defense Supply Center Columbus (DSCC) has granted space-level qualification on Microsemi’s first family of radiation-hardened power MOSFET devices. These popular N-Channel power MOSFETs now join Microsemi’s already-qualified P-Channel power MOSFETs to complete the family of radiation hardened devices originally targeted in this development program.
There are 20 radiation-hardened hermetic power MOSFET devices in three through-hole and two surface-mount packages. These devices are radiation hardened to meet the total dose requirements of MIL-PRF-19500 up to 300,000 RAD(Si).
All devices are constructed to meet the demanding requirements of space applications. Radiation-hardened MOSFETs are primarily used in power supplies, power converters, motor controls, and other power switching applications. These products use the latest wafer fabrication technologies developed in Microsemi's Garden Grove, CA facility.
Features
- Total dose hardened to 300K RAD(Si)
- 100V & 200V N-Channel devices
- 100V P-Channel devices
- Three through-hole hermetic package outlines
- Two surface-mount hermetic package configurations
- Fast switching, low RDS(ON) characteristics
- ingle event hardened
All Microsemi radiation hardened MOSFETs are offered up to Radiation Hardness Assurance (RHA) Level F (Total ionizing dose 300K RAD(Si). All standard lower total dose levels are also available. A full description of these devices and technical data sheets are available on the Microsemi website: www.microsemi.com.