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New PowerMOSFET with leading-edge 0.25-micron UMOS-5 process

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The 0.25-micron UMOS-5 process, one of the world's most advanced MOSFET technologies, enables a 30-percent smaller size compared to former technologies and an industry-leading low onstate resistance of 5.3 milliohms (mΩ) per mm square.

 

NEC Electronics introduced a high-performance Power-MOSFET fabricated with NEC Electronics' newest and most advanced process technology for MOSFET.

 

The new Power-MOSFET will enable smaller and more powerful batteries to power the next generation of portable electronics devices.

 

The growing use of advanced portable applications has resulted in rapidly increasing power requirements for these portable electronics devices.

 

Battery manufacturers need cost-effective, small format components that deliver higher performance with lower power consumption levels.

 

As a leading provider of PowerMOSFET for Li-ion batteries, NEC Electronics remains committed to delivering high-performance, reliable devices to ease the development process and enable manufacturers to meet the demands for batteries to power the next generation of portable electronics devices.

 

NEC Electronics' UMOS-5 process technology represents one major advance.

 

Compared to the established UMOS-4 process technology the structure of the gate electrode is improved, and therewith the channel width can be doubled. This major advance helps battery manufacturers to design low-cost, high-performance batteries in smaller packages, or higher performing batteries in packages of the same size.