The new, highly efficient power PowerMOSFET meet the industry's most stringent power requirements in high-speed computing applications by combining large current capabilities and high-speed switching performance with low on-state resistance. This combined functionality delivers the performance designers demand and the certitude they need to be assured that heat generation is being effectively minimized. As such, they can now leverage the devices to develop system solutions suitable for today's demanding portable market.

Fabricated with a 0.25-micron process, the PowerMOSFET have maximum on-resistances R DS(ON) max ranging from 2.2 to 9.6 mOhm in the µPA272xUT1A family, and from 3.3 to 3.7 mOhm in the µPA273xUT1A family. The devices also offer superior heat dissipation, allowing 4.6 W. Unlike lead-frame packages, which are mounted and then covered with resin, the HVSON-8 package effectively prevents heat generation by connecting directly to the board, allowing heat to radiate via an exposed frame without the use of resin. As a result, 4.6W power dissipation is available, more than twice as comparable, existing PowerMOSFET. Furthermore, without the need for resin, package height can be reduced to a maximum of 1 mm, 40 percent thinner than common PowerMOSFET, making it possible for designers to reduce the size of battery-packs.