As part of the NP-Series, the new MOSFET devices feature an innovative fabrication process and advanced packaging solutions designed to reduce leakage current, manage heat dissipation more efficiently and enable one of the industry’s lowest on-state resistances Rds(on) = 1,5 milliohms, max. (VDSS = 40V; VGS =10V). These new PowerMOSFET are ideal for applications such as automotive, low-voltage DC motor control and uninterruptible power supplies, where high current capability, as well as stringent power management and reliability are required.

With the increasing demand for power-management devices some new key challenges emerge, including a demand for smaller cell sizes that reduce overall chip costs and a lower Rds(on) for optimized heat dissipation. Thanks to a combination of advanced architecture and packaging, NEC Electronics’ new NP-Series PowerMOSFET are high-quality, proven power-management solutions.
The TO-263-7 PowerMOSFET series is manufactured in the UMOS-4 process, which is a trench technology and achieves an ultra-fine design rule of 0.25 µm. This results in higher cell density, up to 160M cells/inch2, enabling chip designers to lower on-resistance over a given area of silicon. The new PowerMOSFET also features an advanced packaging developed by NEC Electronics using an unique multi-bonding technology that doubles the number of bonding wires from two to four wires. The additional wires allow the NEC Electronics MOSFETs to manage high currents with very low on-resistance in relatively small packages by limiting the on-resistance yet still improving current-carrying capabilities.