NEC Electronics announced the availability of two new package types, 8p-VSOF and Mini-HVSON, for mobile device applications. Besides realizing very low on-state resistance values and high speed switching characteristics, the 7 devices in the new packages have the additional advantage to reduce the mounting areas significantly. The introduction of the new package types is part of the NEC’s product portfolio expansion for PowerMOSFET devices.

Two N-channel and one P-channel MOSFET have a 3.3mm x 3.3mm x 0.9mm Mini-HVSON package. Compared to a conventional 5.1mm x 6.0mm x 1.8mm SOP8 package the mounting area of this 8-pin Mini-HVSON package is reduced to about one third, maintaining low RDS(on) values. RDS(on) for the two N-channel MOSFETs with VDSS =30V are as low as 7.3 mΩ (uPA2800T1L) and 9.6 mΩ (uPA2801T1L) respectively. The P-channel device (uPA2801T1L, VDSS =-30V) has a RDS(on) of 13 mΩ.

4 new devices have a 2.8mm x 2.9mm x 0.8mm 8p-VSOF package with a significantly smaller mounting area in comparison to 3.2mm x 6.4mm x 1.2mm TSSOP8 package. Besides the two N-channel MOSFETs (uPA2520, uPA2521) with VDSS =30V and RDS(on) of 13.2 mΩ and 16.5 mΩ, a dual P-channel device (uPA2550, VDSS =-12V) and a complementary device (uPA2590, VDSS =30V/-30V) were developed.